Solid State Science and Technology, Vol. 16, No 1 (2008) 130-138

ISSN 0128-7389

Corresponding Author: sabahmr@yahoo.com

130

THE PERFORMANCE OF InGaN LASER DIODE CONSISTING OF A

SEPARATE CONFINEMENT HETEROSTRUCTURE WITH A MULTIPLE

QUANTUM WELL ACTIVE REGION

S. M. Thahab, H. Abu Hassan, Z. Hassan

Nano-Optoelectronics Research and Technology Laboratory

School of Physics, Universiti Sains Malaysia

11800 Penang, Malaysia

 

ABSTRACT

Low threshold operation of laser diodes depends on the confinement of the injected carriers to the active region. In this study InGaN multi-quantum wells (MQWs) laser diode with modulation doped strained layer superlattices (MD-SLS) as cladding layers and separate confinement heterostructure (SCH) confinement layers was simulated and investigated using ISE-TCAD software simulation program. The optical and electricalproperties exhibited significant enhancement as compared to that in InGaN laser diode with bulk AlGaN cladding layers. Output powers of 73 mW with threshold current of 18.2 mA were obtained. The internal quantum efficiency, laser diode far-field, and the transparency threshold current density were also calculated.

 

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