Solid State Science and Technology, Vol. 16, No 1 (2008) 147-152

ISSN 0128-7389

Corresponding Author:




Z.A. Talib1, L.Y.C. Josephine1, W.M.M. Yunus1, Z, Zainal2, S.A. Halim1,

M.M. Moksin1, K.P. Lim1, W.D.W. Yusoff1.

1Department of Physics, Faculty of Science,

Universiti Putra Malaysia,

43400 UPM, Serdang.

2Department of Chemistry, Faculty of Science,

Universiti Putra Malaysia,

43400 UPM, Serdang.



This paper reports the structural and electrical conductivity characterization of the copper selenide (CuSe) metal chalcogenide semiconductor in bulk form. In situ X-ray powder diffraction analysis of CuSe at low temperature (100 300 K) is studied to support the electrical conductivity analysis. The electrical conductivity of the polycrystalline CuSe was measured and analyzed at low temperature (100 to 286 K) using 4 point probe technique. The electrical conductivity values obtained were in the range of 1.69 x 103 to 2.58 x 103 S/cm.



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