Solid State Science and Technology, Vol. 16, No 2 (2008) 214-222

ISSN 0128-7389

Corresponding Author: mridhuanismail@gmail.com

214

 

ANALYSIS ON GEOMETRY AND SURFACE OF 150 μm SILICON WAFER AFTER BACKGRINDING AND WET ETCHING PROCESS

 

M. R. Ismail1, W. J. Basirun1, Y. K. Tay2

1Department of Chemistry, Faculty of Science,

University of Malaya, Lembah Pantai,

50603, Kuala Lumpur

2 Infineon Technologies (Kulim) Sdn Bhd

Lot 10 & 11, Jalan Hi-Tech 7, Industrial Zone Phase II, Kulim Hi-Tech Park,

09000 Kulim, Kedah

 

ABSTRACT

This paper examines the warpage on the backside of silicon wafer after thinning process. The thinning process includes after backgrinding (BG) and after wet etching (WE). The results on wafer warpage were linked to transmission electron microscopy analysis. This is purposely to explain the correlation between warpage and depth of damage. Results showed that deep backside damage would induce high wafer warpage, hence reduced wafer strength and create difficulty during handling. Further study on surface roughness and topography of each surface finish is obtained by atomic force microscopy and scanning electron microscopy techniques. They indicated that low surface roughness is determined by the smooth surface condition, which goes to after wet etching process.

 

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