Solid State Science and Technology, Vol. 19, No 1 (2011) 114-126

ISSN 0128-7389

114

O2 PLASMA BASED SIZE REDUCTION FOR NANO ELECTRONICS

DEVICE FABRICATION

Th. S. Dhahi1,*, U. Hashim1, N. M. Ahmed2 and A. Mat Taib1

 

1Institute of Nano Electronic Engineering,

University Malaysia Perlis (UniMAP)

Lot 106, 108 & 110, Tingkat 1 Block A, Taman Pertiwi Indah,

Jalan Kangar-Alor Setar, Seriab, 01000 Kangar, Perlis, Malaysia

 

2School of Micro Electronic Engineering, (UniMAP)

Block A, Kompleks Pusat Pengajian KUKUM,

Northern Malaysia University College of Engineering,

02600 Jejawi, Perlis, Malaysia

 

ABSTRACT

The field of plasma chemistry has provided some understanding of plasma processes.

By controlling plasma conditions and gas mixtures, ultra-fast plasma cleaning and

etching is possible. Plasma has frequently been used by the industry as a last step

surface preparation technique in an otherwise predominant wet-etched process. With

enhanced organic removal rate, plasma processes become more desirable as an

environmentally sound alternative to traditional solvent or acid dominated process, not

only as a cleaning tool, but also as a patterning and machining tool. In this paper,

photoresist (PR) stripping using O2 plasma process in nanogap fabrication is explained

including many parameters for PR patterning with limited time in O2 plasma process.

And the applications that have not been possible with limited usefulness, plasma

processes are now approaching the realm of possibility. We introduce this proposal to

fabricate the nanogap device using O2 plasma technique as a size reduction for

biosensor fabrication. In this review, the 2 masks designs are proposed. The first mask

is for the lateral nanogap and the second mask is for a gold pad electrode pattern, and

lateral nanogap is introduced in the fabrication process using polysilicon, and gold as an

electrode. Conventional photolithography technique is used to fabricate this nanogap

(NG) based on the plasma etching technique.

 

http://journal.masshp.net/wp-content/uploads/Journal/2011/Jilid%201/Th.%20S.%20Dhahi%20114-126.pdf

 

REFERENCES

[1] S. M. Irving, Solid State Technol 14 (6) (1971) 47

[2] S. M. Irving, K. E. Lemons, and G. E. Bobos, U.S. Patent No. 3,615,956

[3] R. L. Bersin and M. Singleton, U.S. Patent No. 3,879, 597.

[4] J. W. Coburn, Plasma Chemistry and Plasma Processing, 2 (1) (Plenum, New

York, 1982)

[5] N. Hosokawa, R. Matsuzaki, and T. Asamaki, Jpn. J. Appl. Phys. Suppl., 2 (1)

(1974) 435

[6] G. C. Schwartz, L. B. Zielinski, and T. Schopen, in Etching, M. J. Rand and H. G. Hughes, eds. (Electrochem. Soc. Symposium Series, Princeton, New Jersey,

1976), 122

[7] Chu, Ron F., Lim, Chet P., Loong, Sheau-tan.

“http://www.freepatentsonline.com/5567271.html”

[8] K. Suzuki, S. Okudaira, and I.Kanomata, J. EletroChem. Soc. 126 (1977) 1024

[9] S. Salimian, C.B. Cooper, M.E. Day, J. Vac. Sci. Technol. B5 (1987) 1606,

[10] C. Horwitz, J. Vac. Sci. Technol. A1 (1993) 1796

[11] Aydil and Economou, Process. Symp., ElectroChem. Soc. (1990) P25

[12] Yonghong Liu, Zhan Zhao, 2nd IEEE International Conference on Nano/Micro

Engineered and Molecular Systems, (2007) 753-758

[13] Hyun-Joon Choi And Byung-Teak Lee. Journal Of Electronic Materials, 32 (1)

(2003)