Solid State Science and Technology, Vol. 19, No 1 (2011) 132-137

ISSN 0128-7389

132

EFFECTS OF THERMAL ANNEALING ON THE PROPERTIES OF HIGHLY

REFLECTIVE nc-Si:H/a-CNx:H MULTILAYER FILMS PREPARED BY

r. f. PECVD TECHNIQUE

 

N. M. A. Rashid*, R. Ritikos, B. T. Goh, S. M. A. Gani,

M. R. Muhamad and S. A. Rahman

Solid State Research Laboratory, Department of Physics,

University of Malaya, 50603, Kuala Lumpur, Malaysia

 

ABSTRACT

The effects of thermal annealing in the range of 100-700C on highly reflecting

multilayer thin film consisting of 7 periods of alternating nc-Si:H/a-CNx:H layers

prepared by radio-frequency plasma enhanced chemical vapour (r.f. PECVD)

deposition technique were investigated. The films were deposited on quartz and <111>

p-type c-Si substrate and were studied using ultra-violet-visible-near infrared (UV-Vis-

NIR) and Fourier transform infrared (FTIR) spectroscopy. The as-deposited

multilayered films show high reflectivity and wide stop band width at a wavelength of

approximately 650 60 nm and the value starts to reduce as the annealing temperature,

TA increase. Its FTIR spectra showed the formation of Si-H and Si-H2 bonds in the nc-

Si:H layer and C=C, C=N, CN, C-H and N-H bonds in a-CNx:H layer. The films

remain thermally stable up to the TA of 400C and then begin to degrade above this

temperature. The results shows that both a-CNx:H and nc-Si:H were affected by heat

treatment.

 

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