Solid State Science and Technology, Vol. 19, No 1 (2011) 26-31

ISSN 0128-7389

EFFECT OF METHANE FLOW RATE ON THE

PROPERTIES OF HWCVD SILICON CARBIDE THIN FILMS

F. Shariatmadar Tehrani*, R. Ritikos, B. T. Goh, M. R. Muhamad and S. A. Rahman

Solid State Research Laboratory, Physics Department, University of Malaya,

50603 Kuala Lumpur, Malaysia

ABSTRACT

Silicon carbide (SiC) thin films were prepared by Hot Wire Chemical Vapor Deposition

(HWCVD) from SiH4/CH4 gases on glass and crystalline silicon substrates. The SiH4

gas flow rate was 1 sccm and influences of CH4 gas flow rate, [CH4], on structural

properties of SiC thin films were investigated. The mean crystallite size was increased

with decreasing [CH4] from 100 to 10 sccm. Infrared absorption spectra showed that the

SiC bonds increased with decreasing the methane gas flow rate.

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