Growth and characterization of AlN thin film using the spin coating method: Effect of annealing temperature

 

NurFahana Mohd Amin, Fatin Ain Zatty Mansor, Sukma Nurhayati Zulkifli,

Lee Zhi Yin, Fong Chee Yong, Ng Sha Shiong

 

Nano-Optoelectronic Research and Technology Laboratory, School of Physics,

Universiti Sains Malaysia, 11800 Minden Penang, Malaysia.

 

Corresponding author: annanur252@yahoo.com

 

Abstract

 

This paper reports the growth and characterization of aluminum nitride (AlN) thin film deposited on n-type silicon n-Si(100) using a versatile and cost effective method namely spin coating. The work focuses on the effects of annealing temperature on the structural, surface morphological and optical properties of the deposited AlN thin films. The optical properties of the deposited thin film were determined by using Fourier transform infrared spectrometer. This paper reports the growth and characterization of aluminum nitride (AlN) thin film deposited on n-type silicon n-Si(100) using a versatile and cost effective method namely spin coating. The work focuses on the effects of annealing temperature on the structural, surface morphological and optical properties of the deposited AlN thin films. The optical properties of the deposited thin film were determined by using Fourier transform infrared spectrometer. The optical phonon corresponds to the E1(TO) of the AlN peak is close to the characteristic value of AlN at 670 cm-1. For X-rays diffraction, diffraction peak at 2θ = 33° corresponds to AlN (100) plane for the sample annealed at 650 °C is clearly observed. While from the field-emission scanning electron microscopy images, the surface morphology of AlN thin films exhibited distinct features of nano-sized crystalline grains. The energy dispersion X-rays spectroscopy results showed the presence of nitrogen, oxygen, aluminum, and silicon elements in the films. Finally, the atomic force microscopy results revealed that the rms surface roughness of the films decreases as the annealing temperature increases.

 

Keywords: AlN; Thin Film; Spin coating; Silicon

 

 

 

References

 

[1].                   H. Jin, J. Zhou,  S.R. Dong,  B. Feng,  J.K. Luo,  D.M. Wang,  W.I. Milne  and C.Y.  Yang , Thin Solid Films 520 4863–4870 (2012)

[2].                   A. Jacquat, B. Lenoir, A. Dauscher, P. Verardi, F. Craciun,M. Stolzer, M. Gartner and M. Dinescu,  Appl. Surf. Sci., 186 507-512 (2002)

[3].                   J.K. Kim and S.H. Jeong, J. Korean Phys. Soc., 38 19-24 (2001)

[4].                   G. Radhakrishnan, J. Appl. Phys., 78 6000-6005 (1995)

[5].                   M. El Hakiki, O. Elmazria, M.B. Assouar, V. Mortetb, L. Le Brizoual, M. Vanecekb, P. Alnot, Diamond Relat. Mater., 14 1175-1178 (2005)

[6].                   C.M. Lin, Y.Y. Chen, V.V. Felmetsger,W.C. Lien, T.   Riekkinen, D.G. Senesky, and A.P. Pisano, J. Micromech. Microeng. 23 025019 (2013)

[7].                   C.R. Ortiz, V.M. Pantojas, and W.O.Rivera, Solid-State Electron., 91 106–111 (2014)

[8].                   M.G. Beghi, Acoustic Waves - From Microdevices to Helioseismology, Croatia, 2011.

[9].                   M.A. Augera, L. Vazquez , M. Jergel , O. Sanchez , J.M. Albellaa, Surf. Coat. Technol., 180-181 140-144 (2004)

[10].                 X.P. Kuang, H.Y. Zhang, G.G. Wang, L. Cui, C. Zhu, L. Jin, R. Sun and J.C. Han, Appl. Surf. Sci., 263 62–68 (2012)

[11].                 M. Tabbal, P. M´erel, M.Chaker, and H. P'epin, Eur. Phys. J. AP, 14 115-119 (2001)

[12].                 X.H. Xu, H.S. Wu, C.J. Zhang and Z.H. Jin, Thin Solid Films, 388 62-67 (2001)

[13].                 C.Y. Fong, S. S. Ng, F. K. Yam, H. Abu Hassan, J. Sol-Gel Sci. Technol., 68 95-101 (2013)

[14].                 J.G. Molleja, B.J. G´omez, J. Ferr'on, E. Gautron, J. B¨urgi, B. Abdallah, M. A. Djouadi, J. Feugeas, and P.Y. Jouan, Eur. Phys. J., 64 20302 ( 2013)

[15].                 V. Dimitrova, D. Manova, T. Paskova,Tz. Uzunov, N. Ivanov and  D. Dechev, J. Vac. Sci. Technol., A, 51 161-164 (1998)    

[16].                 K.R. Wang, L. W. Tu,  S. J. Lin,  Y. L. Chen,  Z. W. Jiang, M. Chen, C. L. Hsiao, K. H. Cheng,  J. W. Yeh, and S. K. Chen, Phys. Stat. Sol. (b), 243 1461–1467 (2006)

[17].                 S. Strite and H. Morko, J. Vac. ScI. Technol. B  10 1237-1266 (1992)

[18].                 S. Shanmugan, D. Mutharasu, P. Anithambigai, N. Teeba and I. Abdul Razak,

J. Ceram. Process. Res. 14 385-390 (2013)

[19].                 M. Amirhoseiny, Z. Hassan, and S. S. Ng, Surf. Eng., 29 561-566 (2013)